AO4801AL 30v dual p-channel mosfet general description product summary v ds i d (at v gs =-10v) -5.6a r ds(on) (at v gs =-10v) < 42m w r ds(on) (at v gs = -4.5v) < 52m w r ds(on) (at v gs = -2.5v) < 75m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 62.5 w mj a max -55 to 150 c thermal characteristics units parameter typ junction and storage temperature range the AO4801AL combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is suitable for use as a load switch or in pwm applications. v units parameter absolute maximum ratings t a =25c unless otherwise noted -30v drain-source voltage -30 10 sec 18 a 11 gate-source voltage v 12 -4.5 p dsm avalanche energy l=0.3mh c pulsed drain current c i dsm t a =70c avalanche current c continuous drain current t a =25c t a =70c maximum junction-to-lead t a =25c power dissipation b c/w c/w maximum junction-to-ambient a d 32 90 40 r q ja 48 74 maximum junction-to-ambient a c/w steady state 2 1.3 -4.2 -3.4 1.4 0.9 -30 -5.6 soic-8 g1 d1s1 g1 s1 g2 s2 d1 d1 d2 d2 12 3 4 87 6 5 soic-8 top view g2 d2s2 rev 2: dec 2010 www.aosmd.com page 1 of 5
AO4801AL symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.6 -0.95 -1.3 v i d(on) -25 a 34 42 t j =125c 48 60 41 52 m w 60 75 m w g fs 14 s v sd -0.74 -1 v i s -2 a c iss 750 933 1120 pf c oss 75 108 140 pf c rss 50 81 110 pf r g 3 6 9 w q g (4.5v) 7.4 9.3 11 nc q gs 1.2 1.5 1.8 nc q gd 2.2 3.7 5.2 nc t d(on) 5.2 ns t r 6.8 ns t d(off) 42 ns t f 15 ns t rr 16.8 21 25.2 ns q rr 11.4 14.3 17.2 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =-10v, v ds =-15v, r l =2.7 w , r gen =6 w gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz body diode reverse recovery charge i f =-5.6a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =-5.6a, di/dt=100a/ m s m w i s =-1a,v gs =0v v ds =-5v, i d =-5.6a v gs =-4.5v, i d =-3.5a v gs =-2.5v, i d =-2.5a v gs =-10v, i d =-5.6a i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions switching parameters body diode reverse recovery time gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time v gs =-4.5v, v ds =-15v, i d =-5.6a gate source charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specifi c board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 2: dec 2010 www.aosmd.com page 2 of 5
AO4801AL typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 30 50 70 90 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-2.5v i d =-2.5a v gs =-10v i d =-5.6a v gs =-4.5v i d =-3.5a 20 40 60 80 100 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5.6a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2v -2.5v -4.5v -3v -10v v gs =-2.5v rev 2: dec 2010 www.aosmd.com page 3 of 5
AO4801AL typical electrical and thermal characteristics ? 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t j(max) =150c t a =25c 0 1 2 3 4 5 0 3 6 9 12 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-5.6a 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1s 10ms single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90c/w rev 2: dec 2010 www.aosmd.com page 4 of 5
AO4801AL vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 2: dec 2010 www.aosmd.com page 5 of 5
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